Silicon carbide MOSFET has the characteristics of low on-resistance and low switching loss, which can reduce device loss and improve system efficiency. It is more suitable for high-frequency circuits. It is widely used in new energy vehicle motor controllers, vehicle power supplies, solar inverters, charging piles, UPS, PFC power supplies and other fields.

The new generation of silicon carbide MOSFET (TO-247-4) with auxiliary source connection can further reduce device loss and improve system EMI performance.