Silicon Carbide Schottky Diode

As a wide-bandgap semiconductor material, silicon carbide has superior performance compared with traditional silicon-based devices. Silicon carbide‘s wide band gap (3.26eV), high critical field (3×106V/cm) and high thermal conductivity (4.9W/cm·K) make power semiconductor devices more efficient, faster, and in the equipment Cost, volume, weight and other aspects have been reduced. The basic semiconductor silicon carbide Schottky diode provides industry standard packaging with superior performance and extremely high working efficiency.